3

IXDD509 / IXDE509

IXYS reserves the right to change limits, test conditions, and dimensions.

Unless otherwise noted, 4.5V

≤ V

All voltage measurements with respect to GND. IXD_509 configured as described in Test Conditions.

Electrical Characteristics @ T

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

High input & EN voltage

4.5V

≤ V

2.4

V

Low input & EN voltage

4.5V

≤ V

0.8

V

Input voltage range

-5

V

Enable voltage range

-.3

V

Input current

0V

≤ V

-10

10

µA

High output voltage

V

Low output voltage

0.025

V

High state output

resistance

0.6

1

Ω

Low state output

resistance

0.4

0.8

Ω

Peak output current

9

A

Continuous output current

Limited by package power

dissipation

2

A

Rise time

25

45

ns

Fall time

23

40

ns

On-time propagation

delay

18

35

ns

Off-time propagation

delay

19

30

ns

Enable to output high

delay time

25

50

ns

Disable to output high

impedance delay time

60

80

ns

Power supply voltage

4.5

18

30

V

Power supply current

1

75

3

75

µA

mA

mA

Parameter

Value

Supply Voltage

35 V

All Other Pins (unless specified

-0.3 V to V

otherwise)

Junction Temperature

150

Storage Temperature

-65

Lead Temperature (10 Sec)

300

Parameter

Value

Operating Supply Voltage

4.5V to 30V

Operating Temperature Range

-55

(4)

Package Thermal Resistance *

8-PinPDIP

(PI)

θ

8-PinSOIC

(SIA)

θ

200

6-LeadDFN

(D1)

θ

125-200

6-LeadDFN

(D1)

θ

6-LeadDFN

(D1)

θ