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IRF7805ATRPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRF7805ATRPBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 8 page www.irf.com 2 IRF7805/IRF7805APbF Parameter Min Typ Max Min Typ Max Units Conditions Diode Forward V SD 1.2 1.2 V I S = 7A, VGS = 0V Voltage* Reverse Recovery Q rr 88 88 nC di/dt = 700A/µs Charge V DS = 16V, VGS = 0V, IS = 7A Reverse Recovery Q rr(s) 55 55 Charge (with Parallel Schotkky) Parameter Min Typ Max Min Typ Max Units Conditions Drain-to-Source V (BR)DSS 30 – – 30 – – V V GS = 0V, ID = 250µA Breakdown Voltage* Static Drain-Source R DS(on) 9.2 11 9.2 11 m Ω V GS = 4.5V, ID = 7A on Resistance* Gate Threshold Voltage* V GS(th) 1.0 1.0 V V DS = VGS,ID = 250µA Drain-Source Leakage I DSS 30 30 µA V DS = 24V, VGS = 0 150 150 V DS = 24V, VGS = 0, Tj = 100°C Gate-Source Leakage I GSS ±100 ±100 nA V GS = ±12V Current* Total Gate Charge* Q g 22 31 22 31 V GS = 5V, ID = 7A Pre-Vth Q gs1 3.7 3.7 V DS = 16V, ID = 7A Gate-Source Charge Post-Vth Q gs2 1.4 1.4 nC Gate-Source Charge Gate to Drain Charge Q gd 6.8 6.8 Switch Charge* Q SW 8.2 11.5 8.2 (Q gs2 + Qgd) Output Charge* Q oss 30 36 30 36 V DS = 16V, VGS = 0 Gate Resistance R g 1.7 1.7 Ω Turn-on Delay Time t d(on) 16 16 V DD = 16V Rise Time t r 20 20 ns I D = 7A Turn-off Delay Time t d (off) 38 38 R g = 2Ω Fall Time t f 16 16 V GS = 4.5V Resistive Load Electrical Characteristics Source-Drain Rating & Characteristics Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 300 µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board, t < 10 sec. Measured at V DS < 100mV. This approximates actual operation of a synchronous rectifier. Typ = measured - Q oss * Devices are 100% tested to these parameters. IRF7805 IRF7805A Current* di/dt = 700A/µs (with 10BQ040) V DS = 16V, VGS = 0V, IS = 7A |
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