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2

IRF7805/IRF7805APbF

Parameter

Min Typ Max

Min Typ Max Units

Conditions

Diode Forward

V

SD

1.2

1.2

V

I

Voltage*

Reverse Recovery

Q

rr

88

88

nC di/dt = 700A/µs

Charge

…

V

Reverse Recovery

Q

rr(s)

55

55

Charge (with Parallel

Schotkky)

…

Parameter

Min Typ Max

Min Typ Max Units

Conditions

Drain-to-Source

V

(BR)DSS

30

–

–

30

–

–

V

V

Breakdown Voltage*

Static Drain-Source

R

9.2

11

9.2

11

m

Ω

V

on Resistance*

Gate Threshold Voltage* V

1.0

1.0

V

V

Drain-Source Leakage

I

DSS

30

30

µA

V

150

150

V

Tj = 100°C

Gate-Source Leakage

I

GSS

±100

±100 nA

V

Current*

Total Gate Charge*

Q

g

22

31

22

31

V

Pre-Vth

Q

gs1

3.7

3.7

V

Gate-Source Charge

Post-Vth

Q

gs2

1.4

1.4

nC

Gate-Source Charge

Gate to Drain Charge

Q

gd

6.8

6.8

Switch Charge*

Q

SW

8.2

11.5

8.2

(Q

Output Charge*

Q

oss

30

36

30

36

V

Gate Resistance

R

g

1.7

1.7

Ω

Turn-on Delay Time

t

16

16

V

Rise Time

t

r

20

20

ns

I

Turn-off Delay Time

t

38

38

R

Fall Time

t

f

16

16

V

Resistive Load

Electrical Characteristics

Source-Drain Rating & Characteristics

Notes:



Repetitive rating; pulse width limited by max. junction temperature.

‚

Pulse width

≤ 300 µs; duty cycle ≤ 2%.

ƒ

When mounted on 1 inch square copper board, t < 10 sec.

„

Measured at V

…

Typ = measured - Q

oss

*

Devices are 100% tested to these parameters.

IRF7805

IRF7805A

„

„

Current*

di/dt = 700A/µs

(with 10BQ040)

V

„

„