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IKD06N60RA Datasheet(PDF) 6 Page - Infineon Technologies AG |
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IKD06N60RA Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 16 page 6 IKD06N60RA TRENCHSTOPTMRC-Seriesforhardswitchingapplications Rev.2.1,2012-10-25 DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr - 68 - ns Diode reverse recovery charge Qrr - 0.37 - µC Diode peak reverse recovery current Irrm - 12.0 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -211 - A/µs Tvj=25°C, VR=400V, IF=6.0A, diF/dt=800A/µs SwitchingCharacteristic,InductiveLoad,atTvj=175°C Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic Turn-on delay time td(on) - 12 - ns Rise time tr - 10 - ns Turn-off delay time td(off) - 164 - ns Fall time tf - 171 - ns Turn-on energy Eon - 0.20 - mJ Turn-off energy Eoff - 0.36 - mJ Total switching energy Ets - 0.56 - mJ Tvj=175°C, VCC=400V,IC=6.0A, VGE=0.0/15.0V, rG=23.0 Ω,Lσ=60nH, C σ=40pF L σ,CσfromFig.E DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr - 74 - ns Diode reverse recovery charge Qrr - 0.80 - µC Diode peak reverse recovery current Irrm - 17.0 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -237 - A/µs Tvj=175°C, VR=400V, IF=6.0A, diF/dt=800A/µs |
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