VN2460

Features

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

Applications

Motor controls

Converters

Amplifiers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

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N-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Device

Package Options

BV

(V)

R

DS(ON)

(max)

(Ω)

I

D(ON)

(min)

(mA)

TO-92

TO-243AA

(SOT-89)

VN2460

VN2460N3-G

VN2460N8-G

600

20

250

-G indicates package is RoHS compliant (‘Green’)

Absolute Maximum Ratings

Parameter

Value

Drain-to-source voltage

BV

DSS

Drain-to-gate voltage

BV

DGS

Gate-to-source voltage

±20V

Operating and storage temperature

-55°C to +150°C

+300°C

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

*

Distance of 1.6mm from case for 10 seconds.

TO-92 (N3)

TO-243AA (SOT-89) (N8)

GATE

SOURCE

DRAIN

GATE

SOURCE

DRAIN

DRAIN

Product Marking

VN4FW

W = Code for week sealed

= “Green” Packaging

TO-92 (N3)

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

SiVN

2 4 6 0

Y Y W W

TO-243AA (SOT-89) (N8)

Pin Configurations

General Description

This enhancement-mode (normally-off) transistor utilizes a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces a device with

the power handling capabilities of bipolar transistors and with

the high input impedance and positive temperature coefficient

inherent in MOS devices. Characteristic of all MOS structures,

this device is free from thermal runaway and thermally induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Package may or may not include the following marks: Si or

Package may or may not include the following marks: Si or