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VN2460N3-P014 Datasheet(PDF) 1 Page - Supertex, Inc |
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VN2460N3-P014 Datasheet(HTML) 1 Page - Supertex, Inc |
1 / 7 page ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com VN2460 Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low C ISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain Applications Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) ► ► ► ► ► ► ► ► ► ► ► ► ► N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Device Package Options BV DSS/BVDGS (V) R DS(ON) (max) (Ω) I D(ON) (min) (mA) TO-92 TO-243AA (SOT-89) VN2460 VN2460N3-G VN2460N8-G 600 20 250 -G indicates package is RoHS compliant (‘Green’) Absolute Maximum Ratings Parameter Value Drain-to-source voltage BV DSS Drain-to-gate voltage BV DGS Gate-to-source voltage ±20V Operating and storage temperature -55°C to +150°C Soldering temperature* +300°C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * Distance of 1.6mm from case for 10 seconds. TO-92 (N3) TO-243AA (SOT-89) (N8) GATE SOURCE DRAIN GATE SOURCE DRAIN DRAIN Product Marking VN4FW W = Code for week sealed = “Green” Packaging TO-92 (N3) YY = Year Sealed WW = Week Sealed = “Green” Packaging SiVN 2 4 6 0 Y Y W W TO-243AA (SOT-89) (N8) Pin Configurations General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Package may or may not include the following marks: Si or Package may or may not include the following marks: Si or |
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