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EMI9404 Datasheet(PDF) 3 Page - ON Semiconductor |
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EMI9404 Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 5 page EMI9404 http://onsemi.com 3 ELECTRICAL OPERATING CHARACTERISTICS (Note 1) Symbol Parameter Conditions Min Typ Max Unit LTOT Total Channel Inductance 70 nH RTOT Total Channel DC Resistance 45 W CTOT_0V Total Channel Capacitance, 0 V bias 0 V dc; 1 MHz, 30 mVrms 17.5 24 pF CTOT_2.5V Total Channel Capacitance, 2.5 V bias 2.5 V dc; 1 MHz, 30 mVrms 11.5 pF VST Stand−off Voltage I = 10 mA 5.5 V ILEAK Diode Leakage Current VIN = +3.3 V 0.1 0.5 mA VSIG Signal Clamp Voltage Positive Clamp Negative Clamp ILOAD = 10 mA ILOAD = −10 mA 5.6 −1.5 6.8 −0.8 9.0 −0.4 V VESD In−system ESD Withstand Voltage a) Contact discharge per IEC 61000−4−2 standard, Level 4 (External Pins) b) Contact discharge per IEC 61000−4−2 standard, Level 1 (Internal Pins) c.) Air discharge per IEC61000−4−2 standard. Level 4 (External Pins) Notes 2 and 3 ±14 ±2 ±16 kV VC Clamping Voltage TLP (Note 4) See Figures 4 through 7 IPP = 8 A IPP = 16 A IPP = −8 A IPP = −16 A 13.7 20 −4.4 −7.6 V fC Cut−off frequency ZSOURCE = 50 W, ZLOAD = 50 W 345 MHz 1. TA = 25°C unless otherwise specified. 2. ESD applied to input and output pins with respect to GND, one at a time. 3. Unused pins are left open. 4. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns. PERFORMANCE INFORMATION TYPICAL FILTER PERFORMANCE (TA = 25°C, DC Bias = 0 V, 50 W Environment) TYPICAL DIODE CAPACITANCE VS. INPUT VOLTAGE Figure 2. Typical Filter Insertion Loss Figure 3. Filter Capacitance vs. Input Voltage (Normalized to Capacitance at 0 VDC and 25°C) ORDERING INFORMATION Device Pins Marking Package Shipping† EMI9404MUTAG 8 L4 uDFN−8 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. |
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