2SC3603 datasheet(3/8 Pages) NEC

Part #	2SC3603

Description	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

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Manufacturer	NEC [NEC]

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3

2SC3603

S PARAMETER

VCE = 10 V, IC = 20 mA, ZO = 50

Ω

f (MHz)

|S11|

∠S11

|S21|

∠S21

|S12|

∠S12

|S22|

∠S22

500

.629

-160.8

10.100

92.6

.040

41.5

.256

-49.0

1000

.631

175.8

5.411

75.1

.048

51.4

.244

-57.2

1500

.628

162.5

3.565

60.6

.070

59.2

.232

-66.8

2000

.646

152.2

2.720

48.4

.086

56.0

.220

-77.4

2500

.659

142.1

2.161

38.8

.105

52.2

.213

-89.1

3000

.677

132.0

1.916

25.7

.127

45.1

.217

-103.1

3500

.695

123.8

1.585

14.3

.151

39.7

.232

-119.5

4000

.713

116.5

1.392

5.3

.168

34.8

.254

-134.0

INSERTION GAIN vs.

COLLECTOR CURRENT

20

18

16

14

12

10

8

6

4

2

0

12

5

IC - Collector Current - mA

10

20

50

VCE = 10 V

f = 0.5 GHz

f = 1 GHz

f = 2 GHz

NOISE FIGURE vs. COLLECTOR CURRENT

6

5

4

3

2

1

2

5

10

20

50

IC - Collector Current - mA

VCE =10 V

f = 2 GHz

GAIN BANDWIDTH PRODUCT vs.

COLLECTOR CURRENT

30

20

10

7

5

3

2

12

3

5

7

10

20

30

IC - Collector Current - mA

VCE = 10 V

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