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2SC3583 Datasheet(PDF) 4 Page - NEC

Part No. 2SC3583
Description  MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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 4 page
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4
2SC3583
S-PARAMETER
50
00
60
70
80
90
100
110
120
130
0.32
0.18
0.34
0.16
0.36
0.14
0.38
0.12
0.40
0.10
0.42
0.08
0.17
0.15
0.13
0.11
0.09
0.07
0.33
0.35
0.37
0.39
0.41
0.43
50
10
6.0
4.0
3.0
0.2
0.4
0.6
0.8
1.0
0.3
0.2
0.1
0.2
0.8
0.6
0.4
0.4
REACTANCE COMPONENT
(
R
––––
ZO )
EN
T
20
S11e, S22e-FREQUENCY
S21e-FREQUENCY
90
°
0
°
30
°
−30°
60
°
−60°
180
°
150
°
−150°
120
°
−120°
−90°
4
0
8
12
16
20
S21e
0.2 GHz
0.2 GHz
IC = 5 mA
IC = 20 mA
90
°
0
°
30
°
−30°
60
°
−60°
180
°
150
°
−150°
120
°
−120°
−90°
0.04
0
0.08
0.12
0.16 0.20
S12e
2.0 GHz
IC = 20 mA
IC = 5 mA
S12e-FREQUENCY
VCE = 8 V
200 MHz Step
CONDITION
VCE = 8 V
CONDITION
VCE = 8 V
CONDITION
2.0 GHz
2.0 GHz
0.2 GHz
0.2 GHz
IC = 20 mA
IC = 5 mA
IC = 5 mA
S11e
S22e
IC = 20 mA
0.2 GHz




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