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NSCT2907ALT1G Datasheet(PDF) 2 Page - ON Semiconductor

Part # NSCT2907ALT1G
Description  General Purpose Transistors PNP Silicon
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NSCT2907ALT1G Datasheet(HTML) 2 Page - ON Semiconductor

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NSCT2907ALT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3) (IC = −10 mAdc, IB = 0)
V(BR)CEO
−60
Vdc
Collector −Base Breakdown Voltage (IC = −10 mAdc, IE = 0)
V(BR)CBO
−60
Vdc
Emitter −Base Breakdown Voltage (IE = −10 mAdc, IC = 0)
V(BR)EBO
−5.0
Vdc
Collector Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc)
ICEX
−50
nAdc
Collector Cutoff Current
(VCB = −50 Vdc, IE = 0)
(VCB = −50 Vdc, IE = 0, TA = 125°C)
ICBO
−0.010
−10
mAdc
Base Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc)
IBL
−50
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −0.1 mAdc, VCE = −10 Vdc)
(IC = −1.0 mAdc, VCE = −10 Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
(IC = −150 mAdc, VCE = −10 Vdc)
(IC = −500 mAdc, VCE = −10 Vdc) (Note 3)
hFE
75
100
100
100
50
300
Collector −Emitter Saturation Voltage (Note 3)
(IC = −150 mAdc, IB = −15 mAdc) (Note 3)
(IC = −500 mAdc, IB = −50 mAdc)
VCE(sat)
−0.4
−1.6
Vdc
Base −Emitter Saturation Voltage (Note 3)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VBE(sat)
−1.3
−2.6
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Notes 3, 4), (IC = −50 mAdc, VCE = −20 Vdc,
f = 100 MHz)
fT
200
MHz
Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
8.0
pF
Input Capacitance (VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
30
SWITCHING CHARACTERISTICS
Turn−On Time
(VCC = −30 Vdc, IC = −150 mAdc,
IB1 = −15 mAdc)
ton
45
ns
Delay Time
td
10
Rise Time
tr
40
Turn−Off Time
(VCC = −6.0 Vdc, IC = −150 mAdc,
IB1 = IB2 = −15 mAdc)
(VCC = −6.0 Vdc, IC = −150 mAdc,
IB1 = IB2 = −15 mAdc)
toff
100
Storage Time
ts
80
Fall Time
tf
30
3. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
0
0
−16 V
200 ns
50
1.0 k
200
−30 V
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
+15 V
−6.0 V
1.0 k
37
50
1N916
1.0 k
200 ns
−30 V
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
INPUT
Zo = 50 W
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
INPUT
Zo = 50 W
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit


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