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BC849C Datasheet(PDF) 4 Page - NXP Semiconductors |
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BC849C Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 2004 Jan 16 4 NXP Semiconductors Product data sheet NPN general purpose transistors BC849; BC850 CHARACTERISTICS Tj = 25 °C unless otherwise specified. Notes 1. VBEsat decreases by about 1.7 mV/K with increasing temperature. 2. VBE decreases by about 2 mV/K with increasing temperature. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 30 V − − 15 nA IE = 0; VCB = 30 V; Tj = 150 °C − − 5 μA IEBO emitter cut-off current IC = 0; VEB = 5 V − − 100 nA hFE DC current gain IC = 10 μA; VCE = 5 V; see Figs 2 and 3 BC849B; BC850B − 240 − BC849C; BC850C − 450 − DC current gain IC = 2 mA; VCE = 5 V; see Figs 2 and 3 BC849B; BC850B 200 290 450 BC849C; BC850C 420 520 800 VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − 90 250 mV IC = 100 mA; IB = 5 mA − 200 600 mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; note 1 − 700 − mV IC = 100 mA; IB = 5 mA; note 1 − 900 − mV VBE base-emitter voltage IC = 2 mA; VCE = 5 V; note 2 580 660 700 mV IC = 10 mA; VCE = 5 V; note 2 − − 770 mV Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 2.5 − pF Ce emitter capacitance IC = ic = 0; VEB = 500 mV; f = 1 MHz − 11 − pF fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 100 − − MHz F noise figure IC = 200 μA; VCE = 5 V; RS = 2 kΩ; f = 10 Hz to 15.7 kHz − − 4 dB IC = 200 μA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz − − 4 dB |
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