IXTQ152N085T datasheet(1/5 Pages) IXYS

Part #	IXTQ152N085T

Description	N-Channel Enhancement Mode Avalanche Rated

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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DS99699 (11/06)

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 175°C85

V

DGR

T

J

= 25

°C to 175°C; R

GS = 1 MΩ

85

V

GSM

Transient

± 20

V

I

D25

T

C = 25°C

152

A

I

LRMS

Lead Current Limit, RMS

75

A

I

DM

T

C = 25°C, pulse width limited by TJM

410

A

I

AR

T

C = 25°C25

A

E

AS

T

C = 25°C

750

mJ

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/μs, VDD ≤ VDSS

3

V/ns

T

J

≤ 175°C, R

G = 5 Ω

P

D

T

C = 25°C

360

W

T

J

-55 ... +175

°C

T

JM

175

°C

T

stg

-55 ... +175

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

T

SOLD

Plastic body for 10 seconds

260

°C

M

d

Mounting torque

1.13 / 10 Nm/lb.in.

Weight

TO-3P

5.5

g

TO-247

6

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS

= 0 V, I

D = 250 μA85

V

GS(th)

V

DS = VGS, ID = 250 μA

2.0

4.0

V

I

GSS

V

GS = ± 20 V, VDS = 0 V

± 200

nA

I

DSS

V

DS = VDSS

5

μA

V

GS = 0 V

T

J = 150°C

250

μA

R

DS(on)

V

GS = 10 V, ID = 25 A, Notes 1, 2

5.5

7.0

m

Ω

TrenchMVTM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

IXTH152N085T

IXTQ152N085T

V

DSS

=85

V

I

D25

= 152

A

R

DS(on) ≤

≤≤≤≤ 7.0 m

Ω

TO-3P (IXTQ)

Preliminary Technical Information

G

D

S

TO-247 (IXTH)

G

S

D

G = Gate

D = Drain

S = Source

TAB = Drain

(TAB)

Features

Ultra-low On Resistance

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

175

°C Operating Temperature

Advantages

Easy to mount

Space savings

High power density

Applications

Automotive

- Motor Drives

- 42V Power Bus

- ABS Systems

DC/DC Converters and Off-line UPS

Primary Switch for 24V and 48V

Systems

High Current Switching

Applications

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