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IRLU3915PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRLU3915PBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 11 page Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon limited) 61 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig.9) 43 A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited) 30 IDM Pulsed Drain Current 240 PD @TC = 25°C Power Dissipation 120 W Linear Derating Factor 0.77 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy 200 mJ EAS (6 sigma) Single Pulse Avalanche Energy Tested Value 600 IAR Avalanche Current See Fig.12a, 12b, 15, 16 A EAR Repetitive Avalanche Energy mJ TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C IRLR3915PbF IRLU3915PbF HEXFET® Power MOSFET Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.3 RθJA Junction-to-Ambient (PCB mount) ––– 50 °C/W RθJA Junction-to-Ambient––– 110 Thermal Resistance VDSS = 55V RDS(on) = 14mΩ ID = 30A 10/01/10 www.irf.com 1 HEXFET(R) is a registered trademark of International Rectifier. Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. S D G Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax D-Pak IRLR3915PbF I-Pak IRLU3915PbF l Lead-Free PD - 95090B |
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