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111899

FEATURES

10 years minimum data retention in the

absence of external power

Data is automatically protected during power

loss

Directly replaces 2k x 8 volatile static RAM

or EEPROM

Unlimited write cycles

Low-power CMOS

JEDEC standard 24-pin DIP package

Read and write access times as fast as 100 ns

Full ±10% operating range

Optional industrial temperature range of

-40°C to +85°C, designated IND

PIN ASSIGNMENT

24-Pin ENCAPSULATED PACKAGE

720-mil EXTENDED

PIN DESCRIPTION

A0-A10

- Address Inputs

DQ0-DQ7

- Data In/Data Out

CE

- Chip Enable

WE

- Write Enable

OE

- Output Enable

- Power (+5V)

GND

- Ground

DESCRIPTION

The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048

words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which

energy source is automatically switched on and write protection is unconditionally enabled to prevent

data corruption. The NV SRAM can be used in place of existing 2k x 8 SRAMs directly conforming to

the popular bytewide 24-pin DIP standard. The DS1220Y also matches the pinout of the 2716 EPROM or

the 2816 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the

number of write cycles that can be executed and no additional support circuitry is required for

microprocessor interfacing.

DS1220Y

16k Nonvolatile SRAM

www.dalsemi.com

14

VCC

WE

1

2

3

4

5

6

7

8

9

10

11

12

13

24

15

23

22

21

20

19

18

17

16

A7

A5

A3

A2

A1

A0

DQ0

DQ1

GND

DQ2

A6

A4

A8

A9

OE

A10

CE

DQ7

DQ6

DQ5

DQ3

DQ4