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BSS123N3 Datasheet(PDF) 4 Page - Cystech Electonics Corp. |
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BSS123N3 Datasheet(HTML) 4 Page - Cystech Electonics Corp. |
4 / 8 page CYStech Electronics Corp. Spec. No. : C580N3 Issued Date : 2011.09.16 Revised Date : 2013.10.17 Page No. : 4/8 BSS123N3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 1 2 3 4 5 6 7 8 012 34 56 Drain-Source Voltage -VDS(V) 10V 8V 7V 6V 4.5V 4V 3.5V VGS=3V Breakdown Voltage vs Junction Temperature 100 110 120 130 140 -60 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature-Tj(°C) ID=250μA Static Drain-Source On-State resistance vs Drain Current 100 1000 10000 0.001 0.01 0.1 1 Drain Current-ID(A) VGS=3V VGS=4.5V VGS=10V VGS=2.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1 1.2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Reverse Drain Current -IDR(A) Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 100 200 300 400 500 600 700 800 900 1000 02 46 8 10 Drain-Source On-State Resistance vs Junction Tempearture 100 150 200 250 300 350 400 450 500 550 600 650 700 -60 -20 20 60 100 140 180 Junction Temperature-Tj(°C) VGS=10V, ID=170mA VGS=4V, ID=400mA VGS=10V, ID=700mA Gate-Source Voltage-VGS(V) ID=700mA ID=400mA |
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