CYStech Electronics Corp.

Spec. No. : C403N3

Issued Date : 2006.05.22

Revised Date :2011.12.13

Page No. : 2/7

MTNK2N3

CYStek Product Specification

°C)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

60

V

Gate-Source Voltage

±20

V

640

mA

Continuous Drain Current

500

mA

Pulsed Drain Current *1, 2

950

*1

mA

Total Power Dissipation

1.38

*2

W

Linear Derating Factor

0.01

W/

°C

Thermal Resistance, Junction to Ambient

Rth,j-a

90

*2

°C/W

ESD susceptibility

1000

*3

V

Operating Junction Temperature Range

-55~+150

°C

Storage Temperature Range

Tstg

-55~+150

°C

Note : *1. Pulse Width

≤ 300μs, Duty cycle ≤2%

*2. When the device is mounted on 1in² copper pad of FR-4 board; 270

°C/W when mounted on minimum copper pad.

*3. Human body model, 1.5kΩ in series with 100pF

Electrical Characteristics

(Ta=25

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

60

-

-

V

-

0.05

-

V/℃

1

-

2.5

V

-

-

±10

μA

-

-

1

-

-

100

μA

-

1.6

2

-

1.23

5

-

1.26

4

Ω

-

-

1.2

V

-

600

-

mS

-

62

80

-

17.6

-

-

9

-

pF

Qg

-

1

-

Qgs

-

0.5

-

Qgd

-

0.5

-

nC

-

12

-

-

10

-

-

56

-

-

29

-

ns

*Pulse Test : Pulse Width

≤300μs, Duty Cycle≤2%