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2N7002PV Datasheet(PDF) 2 Page - NXP Semiconductors |
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2N7002PV Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 16 page 2N7002PV All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 5 August 2010 2 of 16 NXP Semiconductors 2N7002PV 60 V, 350 mA N-channel Trench MOSFET 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values Table 2. Pinning Pin Symbol Description Simplified outline Graphic symbol 1S1 source1 2 G1 gate1 3D2 drain2 4S2 source2 5 G2 gate2 6D1 drain1 12 3 4 5 6 S1 D1 G1 S2 msd901 D2 G2 Table 3. Ordering information Type number Package Name Description Version 2N7002PV - plastic surface-mounted package; 6 leads SOT666 Table 4. Marking codes Type number Marking code 2N7002PV ZF Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor VDS drain-source voltage Tamb =25 °C- 60 V VGS gate-source voltage Tamb =25 °C- ±20 V ID drain current VGS =10V [1] Tamb =25 °C- 350 mA Tamb =100 °C- 250 mA IDM peak drain current Tamb =25 °C; single pulse; tp ≤ 10 μs -1.2 A |
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