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FQG4902 Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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FQG4902 Datasheet(HTML) 3 Page - Fairchild Semiconductor |
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3 / 12 page  Rev. A1, April 2002 ©2002 Fairchild Semiconductor Corporation Electrical Characteristics (Continued) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. ISD ≤ 0.54A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 3. Pulse Test : Pulse width ≤ 300 µs, Duty cycle ≤ 2% 4. Essentially independent of operating temperature 5. R θJA is the sum of the junction-to-case and case-to-ambient thermal resistance. RθCA is determined by the user’s board design Maximum R θJA using the different board layouts on 3”x4.5” FR-4 PCB in a still air environment : a. 90°C/W when mounted without any pad copper b. 62.5°C/W when mounted on a 4.5 in2 pad of 2oz copper. In such an environment, the power dissipation can be enhanced up to 2W Symbol Parameter Test Conditions Type Min Typ Max Units Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current N-Ch -- -- 0.54 A P-Ch -- -- -0.54 A ISM Maximum Pulsed Drain-Source Diode Forward Current N-Ch -- -- 4.32 A P-Ch -- -- -4.32 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.54 A N-Ch -- -- 1.5 V VGS = 0 V, IS = -0.54 A P-Ch -- -- -5.0 V trr Reverse Recovery Time VGS = 0 V, IS = 0.54 A, dIF / dt = 100 A/µs (Note 3) N-Ch -- 90 -- ns Qrr Reverse Recovery Charge -- 189 -- nC trr Reverse Recovery Time VGS = 0 V, IS = -0.54 A, dIF / dt = 100 A/µs (Note 3) P-Ch -- 77 -- ns Qrr Reverse Recovery Charge -- 210 -- nC |
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