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MTN3820F3 Datasheet(PDF) 1 Page - Cystech Electonics Corp. |
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MTN3820F3 Datasheet(HTML) 1 Page - Cystech Electonics Corp. |
1 / 10 page CYStech Electronics Corp. Spec. No. : C576F3 Issued Date : 2011.11.19 Revised Date : Page No. : 1/10 MTN3820F3 CYStek Product Specification N-Channel Enhancement Mode Power MOSFET MTN3820F3 BVDSS 100V ID 26A VGS=10V, ID=18A 64mΩ RDSON(TYP) VGS=4V, ID=10A 65mΩ Features • Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package Symbol Outline MTN3820F3 TO-263 G:Gate D:Drain S:Source G D S Absolute Maximum Ratings (TC=25 °C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 V Continuous Drain Current @VGS=10V, TC=25 °C ID 26 Continuous Drain Current @VGS=10V, TC=100 °C ID 15 Pulsed Drain Current (Note 1) IDM 104 Avalanche Current IAS 20 A Avalanche Energy @ L=0.14mH, ID=20A, RG=25Ω EAS 35 Repetitive Avalanche Energy@ L=0.1mH (Note 2) EAR 5.6 mJ TC=25℃ 56 Power Dissipation PD W TA=25℃ 2 Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle ≤ 1% |
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