CYStech Electronics Corp.

Spec. No. : C576F3

Issued Date : 2011.11.19

Revised Date :

Page No. : 1/10

MTN3820F3

CYStek Product Specification

N-Channel Enhancement Mode Power MOSFET

MTN3820F3

100V

26A

64mΩ

65mΩ

Features

• Low Gate Charge

• Simple Drive Requirement

• Repetitive Avalanche Rated

• Fast Switching Characteristic

• RoHS compliant package

Symbol

Outline

MTN3820F3

TO-263

G：Gate

D：Drain

S：Source

G

D

S

°C, unless otherwise noted)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

100

Gate-Source Voltage

±20

V

°C

26

°C

15

Pulsed Drain Current

(Note 1)

104

Avalanche Current

20

A

35

Repetitive Avalanche Energy@ L=0.1mH

(Note 2)

5.6

mJ

56

Power Dissipation

W

2

Operating Junction and Storage Temperature

Tj, Tstg

-55~+150

°C

Note : 1. Pulse width limited by maximum junction temperature

2. Duty cycle ≤ 1%