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MTN3023J3 Datasheet(PDF) 5 Page - Cystech Electonics Corp. |
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MTN3023J3 Datasheet(HTML) 5 Page - Cystech Electonics Corp. |
5 / 9 page CYStech Electronics Corp. Spec. No. : C737J3 Issued Date : 2011.11.22 Revised Date : 2014.03.14 Page No. : 5/9 MTN3023J3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 10 100 1000 10000 0.1 1 10 100 Drain-Source Voltage -VDS(V) C oss Ciss Crss Threshold Voltage vs Junction Tempearture 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -60 -20 20 60 100 140 Junction Temperature-Tj(°C) ID=250uA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 Drain Current-ID(A) VDS=10V Pulsed Ta=25°C Gate Charge Characteristics 0 2 4 6 8 10 12 04 8 12 16 20 24 Total Gate Charge---Qg(nC) VDS=15V ID=20A Maximum Safe Operating Area 0.01 0.1 1 10 100 1000 110 100 Maximum Drain Current vs Case Temperature 0 5 10 15 20 25 30 35 25 50 75 100 125 150 175 Case Temperature---TC(°C) Drain-Source Voltage -VDS(V) 10μs Operation in this area is limited by RDS(ON) DC 10ms 100ms 1ms 100μs |
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