CYStech Electronics Corp.

Spec. No. : C741F3

Issued Date : 2010.06.21

Revised Date : 2012.07.10

Page No. : 1/8

MTN2510F3

CYStek Product Specification

N-Channel Enhancement Mode Power MOSFET

MTN2510F3

Features

• Low Gate Charge

• Simple Drive Requirement

• Repetitive Avalanche Rated

• Fast Switching Characteristic

• RoHS compliant package

Symbol

Outline

°C, unless otherwise noted)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

100

Gate-Source Voltage

±20

V

50

35

Pulsed Drain Current

(Note 1)

150

Avalanche Current

30

A

45

Repetitive Avalanche Energy@ L=0.05mH

(Note 2)

22.5

mJ

140

Power Dissipation

70

W

Operating Junction and Storage Temperature

Tj, Tstg

-55~+175

°C

Note : 1. Pulse width limited by maximum junction temperature

2. Duty cycle ≤ 1%

MTN2510F3

TO-263

G

D

S

100V

50A

19mΩ

20mΩ

G：Gate

D：Drain

S：Source