BT169

SCR

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R301-015,C

QUICK REFERENCE DATA

BT169B BT169D BT169E BT169G BT169H

UNIT

PARAMETER

SYMBOL

MAX

MAX

MAX

MAX

MAX

MAX

Repetitive Peak Off-State Voltages

200

400

500

600

800

V

Average On-State Current

0.5

0.5

0.5

0.5

0.5

A

RMS On-State Current

0.8

0.8

0.8

0.8

0.8

A

Non-Repetitive Peak On-State Current

8

8

8

8

8

A

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

BT169B

200

BT169D

400

BT169E

500

BT169G

600

Repetitive Peak Off-State Voltages(Note 2)

BT169H

800

V

Peak Gate Voltage

5

V

Peak Reverse Gate Voltage

5

V

Peak Gate Current

1

A

Average On-State Current

≦

°C)

0.5

A

RMS On-State Current (All Conduction Angles)

0.8

A

t=10ms

8

A

Non-Repetitive Peak On-State Current

t=8.3ms

9

A

I

I

0.32

A

Repetitive Rate of Rise of On-State Current After

50

A/

μs

Peak Gate Power

2

W

Average Gate Power (Over any 20 ms period)

0.1

W

Junction Temperature

+125

°C

Storage Temperature

-40 ~ +150

°C

Note:1.

2.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the

thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Thermal Resistance Junction to Ambient (typ.)

150

°C /W

Note: pcb mounted, lead length=4mm

PARAMETER

SYMBOL

TSET CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

Gate Trigger Current

25

55

μA

Latching Current

2

6

mA

Holding Current

2

5

mA

On-State Voltage

1.2

1.35

V

Gate Trigger Voltage

gate open circuit

0.2

0.5

0.3

0.8

V

Off-State Leakage Current

0.05

0.1

mA