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FGA90N33ATDTU Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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FGA90N33ATDTU Datasheet(HTML) 5 Page - Fairchild Semiconductor |
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5 / 9 page  5 www.fairchildsemi.com FGA90N33ATD Rev. C0 Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics Figure 9. Gate charge Characteristics Figure 10. SOA Characteristics Figure 11. Turn-on Characteristics vs. Figure 12. Turn-off Characteristics vs. 0 4 8 121620 0 4 8 12 16 20 90A IC = 20A 40A Common Emitter TC = 125 oC Gate-Emitter Voltage, VGE [V] 0.1 1 10 0 1000 2000 3000 4000 Common Emitter VGE = 0V, f = 1MHz TC = 25 oC Cres C oes C ies Collector-Emitter Voltage, VCE [V] 30 110 100 0.01 0.1 1 10 100 500 1ms 10 ms DC *Notes: 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse 10μs 100μs Collector-Emitter Voltage, VCE [V] 500 0 20406080 100 0 3 6 9 12 15 Common Emitter TC = 25 oC 200V V CC = 100V Gate Charge, Qg [nC] 0 20406080 100 10 100 1000 Common Emitter VCC = 200V, VGE = 15V IC = 20A TC = 25 oC TC = 125 oC td(off) t f Gate Resistance, RG [Ω] 5500 0 20 406080 100 10 100 Common Emitter VCC = 200V, VGE = 15V IC = 20A TC = 25 oC TC = 125 oC td(on) t r Gate Resistance, RG [Ω] 200 Gate Resistance Gate Resistance |
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