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FDD6N50TMF085 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDD6N50TMF085 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page November 2013 ©2006 Fairchild Semiconductor Corporation FDD6N50 / FDU6N50 Rev. C1 www.fairchildsemi.com 1 FDD6N50 / FDU6N50 N-Channel UniFETTM MOSFET 500 V, 6 A, 900 m Ω Features •RDS(on) = 900 mΩ (Max.) @ VGS = 10 V, ID = 3 A • Low Gate Charge (Typ. 12.8 nC) •Low Crss (Typ. 9 pF) • 100% Avalanche Tested • Improved dv/dt Capability Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. G D S I-PAK D-PAK G S D G S D Absolute Maximum Ratings T C = 25 oC unless otherwise noted. Thermal Characteristics Symbol Parameter FDD6N50TM / FDD6N50TM_WS / FDU6N50TU Unit VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) 6 3.8 A A IDM Drain Current - Pulsed (Note 1) 24 A VGSS Gate-Source voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 270 mJ IAR Avalanche Current (Note 1) 6A EAR Repetitive Avalanche Energy (Note 1) 8.9 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) - Derate Above 25 °C 89 0.71 W W/ °C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 °C Symbol Parameter FDD6N50TM / FDD6N50TM_WS / FDU6N50TU Unit RθJC Thermal Resistance, Junction-to-Case, Max. 1.4 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 83 |
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