FDD6N50TMF085 datasheet(4/9 Pages) FAIRCHILD

Part #	FDD6N50TMF085

Description	N-Channel UniFETTM MOSFET500 V, 6 A, 900 m廓

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FDD6N50 / FDU6N50 Rev. C1

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4

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation

Figure 8. On-Resistance Variation

vs. Temperature

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 11. Transient Thermal Response Curve

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

♦ Notes :

1. V

GS = 0 V

2. I

D = 250 μA

T

J, Junction Temperature [

oC]

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

♦ Notes :

1. V

GS = 10 V

2. I

D = 3 A

T

J, Junction Temperature [

oC]

25

50

75

100

125

150

0

2

4

6

8

T

C, Case Temperature [

]

℃

10

0

10

1

10

2

10

3

10

-2

10

-1

10

0

10

1

10

2

10 us

Operation in This Area

is Limited by R

DS(on)

DC

10 ms

1 ms

100 us

※

Notes :

1. T

C = 25

oC

2. T

J = 150

oC

3. Single Pulse

V

DS, Drain-Source Voltage [V]

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-2

10

-1

10

0

※

N o te s :

1 . Z

θ JC(t) = 1 .4

/W M a x.

℃

2 . D u ty F a cto r, D = t

1/t2

3 . T

JM - T C = P DM * Z θ JC(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

t

1 , S q uar e W a v e P u ls e D u r a tion [ s ec ]

t1

PDM

t2

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