Electronic Components Datasheet Search |
|
UTT6N10 Datasheet(PDF) 2 Page - Unisonic Technologies |
|
UTT6N10 Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page UTT6N10 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R502-779.C ABSOLUTE MAXIMUM RATINGS (T C=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous ID 6 A Pulsed IDM 24 A Single Pulsed Avalanche Energy (Note 3) EAS 12 mJ Power Dissipation TA=25°C (Note 1) PD 2.2 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient (Note 1) θJA 55 °C/W Junction to Case θJC 12 °C/W ELECTRICAL CHARACTERISTICS (T J =25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 100 V Drain-Source Leakage Current IDSS VDS=80V, VGS=0V 1 µA Gate-Source Leakage Current Forward IGSS VGS=+20V, VDS=0V +100 nA Reverse VGS=-20V, VDS=0V -100 nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 1.0 3.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3A 200 m Ω VGS=4.5V, ID=1A 225 m Ω DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz 234 315 pF Output Capacitance COSS 46 65 pF Reverse Transfer Capacitance CRSS 3.1 5 pF SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDD=25V, ID=6A 4.3 7 nC Gate to Source Charge QGS VDD=50V, ID=6A 0.7 nC Gate to Drain Charge QGD VDD=50V, ID=6A 0.9 nC Turn-ON Delay Time tD(ON) VDD=50V, ID=6A, VGS=10V, RGEN=6 Ω 3.8 10 ns Rise Time tR 1.3 10 ns Turn-OFF Delay Time tD(OFF) 10 20 ns Fall-Time tF 1.5 10 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS ssDrain-Source Diode Forward Voltage VSD IS=3.2A, VGS=0V (Note 2) 0.86 1.3 V Maximum Body-Diode Continuous Current IS 6 A Source Current Pulsed ISM 24 A Notes: 1. θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. 2. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 3. Starting TJ = 25°C, L =11mH, IAS =6A, VDD = 90V, VGS=10V. |
Similar Part No. - UTT6N10 |
|
Similar Description - UTT6N10 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |