UT7430L-K08-3030-R datasheet(3/7 Pages) UTC

Part #	UT7430L-K08-3030-R

Description	30V, 34A N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download	7 Pages

Scroll/Zoom	100%

Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

Logo

3 / 7 page

UT7430

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-903.b



ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

30

V

Gate-Source Voltage

VGSS

±20

V

Drain Current

Continuous

TC=25°C

ID

34

A

TC=100°C

21

A

Pulsed (Note 3)

IDM

80

A

Continuous Drain Current (Note 1)

TA=25°C

IDSM

13

A

TA=70°C

10.2

A

Avalanche Current (Note 3)

IAR

22

A

Repetitive Avalanche Energy

L=0.1mH (Note 3)

EAR

24

mJ

Power Dissipation (Note 2)

TC=25°C

PD

23

W

TC=100°C

9

W

Power Dissipation (Note 1)

TA=25°C

PDSM

3.1

W

TA=70°C

2

W

Junction Temperature

TJ

-55~+150

°C

Storage Temperature Range

TSTG

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient (Note 1)

θJA

60

75

°C/W

Junction to Case (Note 2)

θJC

4.5

5.4

°C/W

Notes: 1. The value of θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air

environment with TA=25°C. The value in any given application depends on the user's specific board

design, and the maximum temperature of 150°C may be used if the PCB allows it.

2. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is

more useful in setting the upper dissipation limit for cases where additional heat sinking is used.

3. Repetitive rating, pulse width limited by junction temperature TJ (MAX)=150°C.

Similar Part No. - UT7430L-K08-3030-R

Manufacturer	Part #	Datasheet	Description
SHENZHEN DOINGTER SEMIC...	UT7430G-K08-3030-R	1Mb / 4P	N-Channel MOSFET uses advanced trench technology

More results

Similar Description - UT7430L-K08-3030-R

Manufacturer	Part #	Datasheet	Description
AiT Semiconductor Inc.	AM3400	486Kb / 7P	MOSFET 30V N-CHANNEL ENHANCEMENT MODE POWER MOSFET REV2.0
Zetex Semiconductors	ZXMN3A01F	1Mb / 7P	30V N-CHANNEL ENHANCEMENT MODE MOSFET
	ZXMN3A14F	209Kb / 7P	30V N-CHANNEL ENHANCEMENT MODE MOSFET
	ZXMN3A01E6	1Mb / 7P	30V N-CHANNEL ENHANCEMENT MODE MOSFET
WILLAS ELECTRONIC CORP	SE4812LT1	428Kb / 4P	30V N-Channel Enhancement-Mode MOSFET
Diodes Incorporated	ZXM64N03X	337Kb / 7P	30V N-CHANNEL ENHANCEMENT MODE MOSFET
Leshan Radio Company	LN2306LT1G	825Kb / 4P	30V N-Channel Enhancement-Mode MOSFET
Diodes Incorporated	DMG6402LVT	220Kb / 6P	30V N-CHANNEL ENHANCEMENT MODE MOSFET
Cystech Electonics Corp...	MTNK8S3	488Kb / 9P	30V N-Channel Enhancement Mode MOSFET
Pan Jit International I...	PJS50N03	227Kb / 6P	30V N-CHANNEL ENHANCEMENT MODE MOSFET

More results

UT7430L-K08-3030-R Datasheet(PDF) 3 Page - Unisonic Technologies

UT7430L-K08-3030-R Datasheet(HTML) 3 Page - Unisonic Technologies

Similar Part No. - UT7430L-K08-3030-R

Similar Description - UT7430L-K08-3030-R

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL