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UT2035ZG-AE3-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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UT2035ZG-AE3-R Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 4 page UT2035Z Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R502-937.a ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±8 V Drain Current Continuous (Note 1) Steady, TA=25°C ID -3.6 A State, TA=70°C -2.9 A Pulsed (Note 2) IDM -24 A Power Dissipation (Note 1) PD 0.81 W Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 1. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t≤10s. 2. Repetitive rating, pulse width limited by junction temperature. THERMAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 153.5 °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS (Note 1) Drain-Source Breakdown Voltage BVDSS ID=-250µA, VGS=0V -20 V Drain-Source Leakage Current IDSS VDS=-20V, VGS=0V -1.0 µA Gate-Source Leakage Current Forward IGSS VGS=+8V, VDS=0V +10 µA Reverse VGS=-8V, VDS=0V -10 µA ON CHARACTERISTICS (Note 1) Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250µA -0.4 -0.7 -1.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-4.0A 30 42 mΩ VGS=-2.5V, ID=-4.0A 50 65 mΩ VGS=-1.8V, ID=-2.0A 61 82 mΩ Forward Transfer Admittance |YFS| VDS=-5V, ID=-4A 14 S Diode Forward Voltage VSD VGS=0V, IS=-1A -0.7 -1.0 V DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=-10V, f=1.0MHz 1610 pF Output Capacitance COSS 157 pF Reverse Transfer Capacitance CRSS 145 pF SWITCHING PARAMETERS Total Gate Charge QG VGS=-4.5V, VDS=-10V, ID=-4A 15.4 nC Gate to Source Charge QGS 2.5 nC Gate to Drain Charge QGD 3.3 nC Gate Resistance RG VDS=0V, VGS=0V, f=1MHz 9.45 Ω Turn-ON Delay Time tD(ON) VDS=-10V, VGS=-4.5V,ID=-1A, RG=6.0Ω, RL=10Ω 16.8 ns Rise Time tR 12.4 ns Turn-OFF Delay Time tD(OFF) 94.1 ns Fall-Time tF 42.4 ns Note: 1. Short duration pulse test used to minimize self-heating effect. |
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