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MTN8N65FI Datasheet(PDF) 5 Page - Cystech Electonics Corp. |
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MTN8N65FI Datasheet(HTML) 5 Page - Cystech Electonics Corp. |
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5 / 9 page  CYStech Electronics Corp. Spec. No. : C727FI Issued Date : 2012.09.26 Revised Date : Page No. : 5/9 MTN8N65FI CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Reverse Voltage 10 100 1000 10000 0 5 10 15 20 25 30 Drain-to-Source Voltage-VDS(V) Ciss Coss Crss f=1MHz Brekdown Voltage vs Ambient Temperature 650 700 750 800 -100 -50 0 50 100 150 200 Ambient Temperature-Tj(°C) ID=250μA, VGS=0V Maximum Safe Operating Area 0.01 0.1 1 10 100 1 10 100 1000 Drain-Source Voltage -VDS(V) Operation in this area is limited by RDS(ON) DC 10ms 100ms 1ms 100μs 10μ Single pulse Tc=25°C; Tj=150°C Gate Charge Characteristics 0 2 4 6 8 10 12 0 5 10 15 20 25 30 35 Total Gate Charge---Qg(nC) ID=7.5A VDS=130 VDS=325V VDS=520V Maximum Drain Current vs Case Temperature 0 1 2 3 4 5 6 7 8 9 25 50 75 100 125 150 175 Case Temperature---TC(°C) |
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