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UT3N10 Datasheet(PDF) 2 Page - Unisonic Technologies |
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UT3N10 Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 4 page UT3N10 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R502-859.A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (VGS=4.5V, TA= 25°C) (Note 2) ID 3.0 A Pulsed Drain Current (Note 3, 4) IDM 10 A Power Dissipation (TA= 25°C) PD 0.35 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Surface mounted on 1 in 2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad. 3. Pulse width limited by TJ(MAX) 4. Pulse width ≤300μs, duty cycle≤2%. THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient θJA 350 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS =0V, ID =250µA 100 V Breakdown Voltage Temperature Coefficient J DSS T Δ BV Δ Reference to 25°C, ID=1mA 0.05 V/°C Drain-Source Leakage Current IDSS VDS =60V,VGS =0V 10 µA Gate-Source Leakage Current IGSS VGS =±20V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS =VGS, ID =250µA 1.0 3.0 V Drain to Source On-state Resistance RDS(ON) VGS =10V, ID =3A 90 mΩ VGS =4.5V, ID =2A 120 mΩ DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V,VGS=0V,f =1.0MHz 490 780 pF Output Capacitance COSS 55 pF Reverse Transfer Capacitance CRSS 40 pF SWITCHING PARAMETERS Turn-ON Delay Time (Note) tD(ON) VGS=10V, VDS=30V, ID=1A, RD =30Ω, RG =3.3Ω 6 ns Turn-ON Rise Time tR 5 42 ns Turn-OFF Delay Time tD(OFF) 16 ns Turn-OFF Fall-Time tF 3 58 ns Total Gate Charge (Note) QG VGS =4.5V, VDS =48V, ID =3A 6 10 nC Gate Source Charge QGS 1.6 nC Gate Drain Charge QGD 3 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note) VSD IS =1.2A, VGS =0V 1.2 V Reverse Recovery Time trr IS=3A,VGS=0V, dI/dt=100A/µs 25 ns Reverse Recovery Charge QRR 26 nC Note: Pulse width ≤300μs, duty cycle≤2%. |
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