CYStech Electronics Corp.

Spec. No. : C408I3-A

Issued Date : 2010.03.09

Revised Date : 2012.11.20

Page No. : 2/11

MTN5N60I3

CYStek Product Specification

°C)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Continuous Drain Current

5*

A

°C

3*

A

(Note 1)

20*

A

Single Pulse Avalanche Energy

(Note 2)

37.5

mJ

Avalanche Current

(Note 1)

5

A

Repetitive Avalanche Energy

(Note 1)

5

mJ

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

4.5

V/ns

Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)

from case for 10 seconds

300

°C

W

Linear Derating Factor

Pd

50

0.4

W/

°C

Operating Junction and Storage Temperature

Tj, Tstg

-55~+150

°C

*Drain current limited by maximum junction temperature

Note : 1

2

3

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction-to-case, max

2.5

°C/W

Thermal Resistance, Junction-to-ambient, max

110

°C/W