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UM6K1NL-AL6-R Datasheet(PDF) 1 Page - Unisonic Technologies |
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UM6K1NL-AL6-R Datasheet(HTML) 1 Page - Unisonic Technologies |
1 / 4 page UNISONIC TECHNOLOGIES CO., LTD UM6K1N Preliminary Power MOSFET www.unisonic.com.tw 1 of 4 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R502-897.b SILICON N-CHANNEL MOSFET DESCRIPTION The UTC UM6K1N is a silicon N-channel MOSFET. it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate threshold voltage. The UTC UM6K1N is suitable for switching and interfacing applications. FEATURES * RDS(on)<8Ω @ VGS=4V, ID=10mA RDS(on)<13Ω @ VGS=2.5V, ID=1mA * High switching speed * Low gate threshold voltage SYMBOL G2 G1 S1 S2 D1 D2 ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 4 5 6 UM6K1NL-AL6-R UM6K1NG-AL6-R SOT-363 S1 G1 D2 S2 G2 D1 Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source MARKING |
Similar Part No. - UM6K1NL-AL6-R |
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Similar Description - UM6K1NL-AL6-R |
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