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18N65L-T47-T Datasheet(PDF) 3 Page - Unisonic Technologies

Part # 18N65L-T47-T
Description  18A, 650V N-CHANNEL POWER MOSFET
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

18N65L-T47-T Datasheet(HTML) 3 Page - Unisonic Technologies

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18N65
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R502-771.D
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
650
V
Drain-Source Leakage Current
IDSS
VDS=650V, VGS=0V
25
µA
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±30V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
4.0
V
Static Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=9A (Note)
0.36
0.5
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1MHz
2500
pF
Output Capacitance
COSS
280
pF
Reverse Transfer Capacitance
CRSS
23
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VGS=10V, VDS=0.5VDSS,
ID=18A, RG=5Ω (External)
21
ns
Turn-ON Rise Time
tR
60
ns
Turn-OFF Delay Time
tD(OFF)
62
ns
Turn-OFF Fall-Time
tF
60
ns
Total Gate Charge
QG
VGS=10V, VDS=0.8VDSS,
ID=18A
50
nC
Gate Source Charge
QGS
15
nC
Gate Drain Charge
QGD
18
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IF=IS ,VGS=0V (Note )
1.5
V
Maximum Continuous Drain-Source
Diode Forward Current
IS
VGS=0V
18
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Repetitive
54
A
Reverse Recovery Time
trr
VGS=0V, dIF/dt=100A/µs,
IS=18A, VR=100V
200
ns
Reverse Recovery Charge
QRR
0.8
µC
Note: Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.


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