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18N25 Datasheet(PDF) 2 Page - Unisonic Technologies

Part # 18N25
Description  18A, 250V N-CHANNEL POWER MOSFET
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

18N25 Datasheet(HTML) 2 Page - Unisonic Technologies

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18N25
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-786.B
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
250
V
Gate to Source Voltage
VGSS
±20
V
Drain Current
Continuous
ID
18
A
Pulsed (Note 2)
IDM
72
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
945
mJ
Avalanche Current (Note 2)
IAR
18
A
Power Dissipation
TO-220F
PD
40
W
TO-263
138
°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. Starting TJ=25°C , L=5.2mH, IAS=18A, VDD=50V, RG
=25Ω.
4. Drain current limited by maximum junction temperature.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62.5
°C/W
Junction to Case
TO-220F
θJc
3.1
°C/W
TO-263
0.9
°C/W
ELECTRICAL CHARACTERISTICS (T
C =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
250
V
Drain-Source Leakage Current
IDSS
VDS=250V, VGS=0V
1
µA
Gate-Source Leakage Current
Forward
IGSS
VGS =20V, VDS = 0V
100
nA
Reverse
VGS = -20V, VDS = 0V
-100
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
4.0
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=18A
0.16
0.24
Ω
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V,VGS=0V,f=1.0MHz
2200 2860
pF
Output Capacitance
COSS
330
430
pF
Reverse Transfer Capacitance
CRSS
25
40
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=125V, VGS=10V,
ID=18A (Note 1,2)
30
45
nC
Gate-Source Charge
QGS
10
nC
Gate-Drain Charge
QGD
10
nC
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=18A,
RG=25
Ω (Note 1,2)
15
25
ns
Turn-ON Rise Time
tR
130
195
ns
Turn-OFF Delay Time
tD(OFF)
30
45
ns
Turn-OFF Fall Time
tF
100
150
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
18
A
Maximum Body-Diode Pulsed Current
ISM
72
A
Drain-Source Diode Forward Voltage
VSD
IS =18A, VGS=0V
1.4
V
Note: 1.
Pulse Test : Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature


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