10N65T

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

6 of 6

www.unisonic.com.tw

QW-R502-878.C



TYPICAL CHARACTERISTICS

Drain Current vs. Drain-Source

Breakdown Voltage

0.6

0

Drain Current vs. Gate Threshold Voltage

1.8

2.4

3.6

1.2

3

0

50

100

150

200

250

300

0

200

600

800 1000

400

0

50

100

150

200

250

300

Drain-Source On-State Resistance

Characteristics

0

2

01

2

3

1

3

5

0

Drain Current vs. Source to Drain Voltage

0.2

0.4

0.6

0.8

1.2

0

2

4

8

12

4

6

1.0

4

5

10

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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

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