2SC5027 datasheet(2/5 Pages) NELLSEMI

Part #	2SC5027

Description	Silicon NPN triple diffusion planar transistor

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Manufacturer	NELLSEMI [Nell Semiconductor Co., Ltd]

Direct Link	http://www.nellsemi.com

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SEMICONDUCTOR

RoHS

Nell High Power Products

Page 2 of 5

www.nellsemi.com

ELECTRICAL CHARACTERISTICS (T = 25°C)

a

UNIT

µA

ton

VCE(sat)

IEBO

PARAMETER

Emitter cutoff current

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

(Gain-Bandwidth product)

Fall time

ICBO

tstg

V

Collector cutoff current

Collector to emitter sustaining voltage

SYMBOL

VCEX(SUS)

VBE(sat)

fT

Turn-on time

Storage time

V

= 800V, l = 0

CB

E

l = 1.5A, L = 2mH,

C

l

= 0.3A,

BI

l

= -0.3A, clamped

B2

V

= 5V, l = 0

EB

C

l = 1.5A, l = 0.3A

C

B

l = 1.5A, l = 0.3A

C

B

V

= 10V, l = 0.2A

CE

C

MIN.

TYP.

l = 2A, l

= 0.4A, l

= -0.8A

C

B1

B2

V

= 400V, R = 200Ω

CC

L

CONDITIONS

µs

MHz

V

h

1

FE

DC current gain

h

2

FE

V

= 5V, I

CE

= 0.2A

C

Rank-N

Rank-R

Rank-O

V

= 5V, I

CE

= 1A

C

10

15

20

10

20

30

40

tf

0.3

3.0

0.5

Cob

V(BR)CBO

V(BR)CEO

V(BR)EBO

Output capacitance

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

V

= 10V, f= 1MHz,

CB

l = 0

E

l = 1mA, l = 0

C

E

l = 5mA, I = 0

C

B

l = 1mA, I = 0

E

C

850

800

7

60

MAX.

VALUE

10

800

2

1.5

15

pF

V

2SC5027 Series

R

-

A

5027

2SC

Current & Voltage rating, I & V

C

CEO

DC current gain rank, h

1

FE

ORDERING INFORMATION SCHEME

Transistor series

Package type

A = TO-220AB

AF = TO-220F

N = 10 ~ 20

R = 15 ~ 30

O = 20 ~ 40

NPN Type

3A / 800V

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2SC5027 Datasheet(PDF) 2 Page - Nell Semiconductor Co., Ltd

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