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2SB649AM Datasheet(PDF) 1 Page - Nell Semiconductor Co., Ltd |
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2SB649AM Datasheet(HTML) 1 Page - Nell Semiconductor Co., Ltd |
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1 / 4 page  APPLICATIONS SEMICONDUCTOR RoHS RoHS Bipolar General Purpose PNP Power Transistor Nell High Power Products 2SB649AM Series ABSOLUTE MAXIMUM RATINGS (T = 25°C) a UNIT V PC IC(peak) Tstg PARAMETER Collector to emitter voltage ºC -5 1 -3 -1.5 Peak collector current Collector current Collector power dissipation Junction temperature -180 -160 20 VALUE VCBO Tj -55 to 150 150 A Collector to base voltage Emitter to base voltage SYMBOL VCEO VEBO IC T = 25°C C Storage temperature Page 1 of 4 www.nellsemi.com 2SB649AM 2SB649AM-A -180 -120 W TO-126 All dimensions in millimeters 8.0±0.5 º 12 0 Ø3.1 +0.15 - 0.1 2.7± 0.4 1.2 0.55 2.29±0.5 2.29±0.5 0.8 1.1 B C E PNP E C B Low frequency power amplifier complementary pair with 2SD669AM/2SD669AM-A T = 25°C A 1 2 3 (E) (C) (B) -1.5A / -120V, -160V / 20W |
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