2SA1941B datasheet(3/3 Pages) NELLSEMI

Part #	2SA1941B

Description	Silicon PNP triple diffusion planar transistor

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Manufacturer	NELLSEMI [Nell Semiconductor Co., Ltd]

Direct Link	http://www.nellsemi.com

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Fig.1 Collector output characteristics

Collector emitter voltage, V

(V)

CE

Collector current, l (A)

C

Fig.4 DC current gain

Collector current, l (A)

C

Fig.5 Safe operating area

Collector-Emitter voltage, V

(V)

CE

Fig.3 I -V

characteristics

C

BE

Collector current, I (A)

C

Fig.2 Collector-Emitter saturation voltage

-10

-8

-6

-4

-2

0

-10

-8

-6

-4

-2

0

-10

-1

-0.1

-0.01

-0.1

-1

-10

-100

-10

-8

-6

-4

-2

0

-1.2

-0.8

-0.4

0

-1.6

-2.0

1000

100

10

1

-0.01

-0.1

-1

-10

2SA1941B Series

-250

-200

-150

-100

-50

-40

-30

-20

l

= -10 mA

B

Common emitter

T = 25°C

C

T = 100°C

C

T = -25°C

C

T = 25°C

C

Common emitter

l /l =10

C B

T = 100°C

C

T = 25°C

C

T = -25°C

C

Common emitter

V

= -5V

CE

T = 100°C

C

T = 25°C

C

T = -25°C

C

Common emitter

V

= -5V

CE

-50

-30

-10

-5

-3

-1

-0.5

-0.3

-0.1

-0.05

-2

-10

-30

-100

-300

-3

l max (continuous)

C

l max (pulsed)*

C

1 ms*

10 ms*

100 ms*

DC operation

T = 25°C

C

* Single nonrepetitive

pulse T = 25°C

C

Curves must be derated

linearly with increase in

temperature.

V

max

CEO

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