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AT45DB161D-SU Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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AT45DB161D-SU Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers |
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1 / 51 page  Features • Single 2.5V - 3.6V or 2.7V - 3.6V Supply • RapidS™ Serial Interface: 66MHz Maximum Clock Frequency – SPI Compatible Modes 0 and 3 • User Configurable Page Size – 512-Bytes per Page – 528-Bytes per Page – Page Size Can Be Factory Pre-configured for 512-Bytes • Page Program Operation – Intelligent Programming Operation – 4,096 Pages (512-/528-Bytes/Page) Main Memory • Flexible Erase Options – Page Erase (512-Bytes) – Block Erase (4-Kbytes) – Sector Erase (128-Kbytes) – Chip Erase (16-Mbits) • Two SRAM Data Buffers (512-/528-Bytes) – Allows Receiving of Data while Reprogramming the Flash Array • Continuous Read Capability through Entire Array – Ideal for Code Shadowing Applications • Low-power Dissipation – 7mA Active Read Current Typical –25μA Standby Current Typical –15μA Deep Power Down Typical • Hardware and Software Data Protection Features – Individual Sector • Sector Lockdown for Secure Code and Data Storage – Individual Sector • Security: 128-byte Security Register – 64-byte User Programmable Space – Unique 64-byte Device Identifier • JEDEC Standard Manufacturer and Device ID Read • 100,000 Program/Erase Cycles Per Page Minimum • Data Retention – 20 Years • Industrial Temperature Range • Green (Pb/Halide-free/RoHS Compliant) Packaging Options 1. Description The AT45DB161D is a 2.5V or 2.7V, serial-interface sequential access Flash memory ideally suited for a wide variety of digital voice-, image-, program code- and data-stor- age applications. The AT45DB161D supports RapidS serial interface for applications requiring very high speed operations. RapidS serial interface is SPI compatible for frequencies up to 66MHz. Its 17,301,504-bits of memory are organized as 4,096 pages of 512-bytes or 528-bytes each. In addition to the main memory, the AT45DB161D also contains two SRAM buffers of 512-/528-bytes each. The buffers allow the receiving of data while a page in the main Memory is being reprogrammed, as well as writing a continuous data stream. EEPROM emulation (bit or byte alterabil- ity) is easily handled with a self-contained three step read-modify-write 16-megabit 2.5V or 2.7V DataFlash AT45DB161D (Not Recommended for New Designs) 3500P–DFLASH–5/2013 |
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