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AT45DB161D Datasheet(PDF) 9 Page - List of Unclassifed Manufacturers |
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AT45DB161D Datasheet(HTML) 9 Page - List of Unclassifed Manufacturers |
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9 / 51 page  9 3500P–DFLASH–5/2013 AT45DB161D page address bits (A20 - A9) that specify the page in the main memory to be erased and nine don’t care bits. When a low-to-high transition occurs on the CS pin, the part will erase the selected page (the erased state is a logical 1). The erase operation is internally self-timed and should take place in a maximum time of tPE. During this time, the status register and the RDY/BUSY pin will indicate that the part is busy. 7.5 Block Erase A block of eight pages can be erased at one time. This command is useful when large amounts of data has to be written into the device. This will avoid using multiple Page Erase Commands. To perform a block erase for the standard DataFlash page size (528-bytes), an opcode of 50H must be loaded into the device, followed by three address bytes comprised of two don’t care bits, nine page address bits (PA11 -PA3) and 13 don’t care bits. The nine page address bits are used to specify which block of eight pages is to be erased. To perform a block erase for the binary page size (512-bytes), the opcode 50H must be loaded into the device, followed by three address bytes consisting of three don’t care bits, nine page address bits (A20 - A12) and 12 don’t care bits. The nine page address bits are used to specify which block of eight pages is to be erased. When a low-to-high transition occurs on the CS pin, the part will erase the selected block of eight pages. The erase operation is internally self-timed and should take place in a maximum time of tBE. During this time, the status register and the RDY/BUSY pin will indicate that the part is busy. Table 7-1. Block Erase Addressing 7.6 Sector Erase The Sector Erase command can be used to individually erase any sector in the main memory. There are 16 sectors and only one sector can be erased at one time. To perform sector 0a or sector 0b erase for the standard DataFlash page size (528-bytes), an opcode of 7CH must be loaded into the device, followed by three address bytes comprised of two don’t care bits, nine page address bits (PA11 - PA3) and 13 don’t care bits. To perform a sector 1-15 erase, the opcode 7CH must be loaded into the device, followed by three address bytes comprised of two don’t care bits, four page address bits (PA11 - PA8) and 18 don’t care bits. To perform sector 0a or sector 0b erase for the binary page size (512-bytes), an opcode of 7CH must be loaded into the device, followed by three address bytes comprised of three don’t care bit and nine page address bits (A20 - A12) and 12 don’t care bits. To perform a sector 1-15 erase, the opcode 7CH must be loaded into the device, followed by three address bytes comprised of 3 don’t care bit and four page address bits (A20 - A17) and 17 don’t care bits. The page address bits are used to specify any valid address location within the sector which is to be erased. When a low-to-high transition occurs on the CS pin, the part will erase the selected sector. The erase operation is internally self-timed and should PA11/ A20 PA10/ A19 PA9/ A18 PA8/ A17 PA7/ A16 PA6/ A15 PA5/ A14 PA4/ A13 PA3/ A12 PA2/ A11 PA1/ A10 PA0/ A9 Block 0 0 0000000 X X X 0 0 0 0000001 X X X 1 0 0 0000010 X X X 2 0 0 0000011 X X X 3 • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 1 1 1111100 X X X 508 1 1 1111101 X X X 509 1 1 1111110 X X X 510 1 1 1111111 X X X 511 |
Similar Part No. - AT45DB161D_13 |
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Similar Description - AT45DB161D_13 |
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