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AT25DQ161-SH-B Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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AT25DQ161-SH-B Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers |
1 / 65 page 8671D–DFLASH–1/2013 Features Single 2.7V - 3.6V supply Serial Peripheral Interface (SPI) compatible Supports SPI Modes 0 and 3 Supports RapidS™ operation Supports Dual- and Quad-Input Program Supports Dual- and Quad-Output Read Very high operating frequencies 100MHz for RapidS 85MHz for SPI Clock-to-output time (tV) of 5ns maximum Flexible, optimized erase architecture for code + data storage applications Uniform 4KB, 32KB, and 64KB Block Erase Full Chip Erase Individual sector protection with Global Protect/Unprotect feature 32 sectors of 64KB each Hardware controlled locking of protected sectors via WP pin Sector Lockdown Make any combination of 64KB sectors permanently read-only 128-byte One-Time Programmable (OTP) Security Register Flexible programming Byte/Page Program (1 to 256 bytes) Fast Program and Erase times 1.0ms typical Page Program (256 bytes) time 50ms typical 4KB Block Erase time 250ms typical 32KB Block Erase time 400ms typical 64KB Block Erase time Program and Erase Suspend/Resume Automatic checking and reporting of erase/program failures Software controlled reset JEDEC Standard Manufacturer and Device ID Read Methodology Low power dissipation 5mA Active Read current (typical at 20MHz) 5μA Deep Power-Down current (typical) Endurance: 100,000 Program/Erase cycles Data retention: 20 years Complies with full industrial temperature range Industry standard green (Pb/Halide-free/RoHS-compliant) package options 8-lead SOIC (0.150" and 0.208" wide) 8-pad Ultra Thin UDFN (5 x 6 x 0.6mm) AT25DQ161 16-Mbit, 2.7V Minimum SPI Serial Flash Memory with Dual-I/O and Quad-I/O Support DATASHEET |
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