UF4N20Z

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-753.D



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

200

V

Gate-Source Voltage

±20

V

Continuous Drain Current

4

A

Avalanche Current

4

A

Avalanche Energy

Single Pulsed

52

mJ

Repetitive

52

mJ

Power Dissipation

TO-252

1.14

W

SOT-223

0.8

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

200

V

Drain-Source Leakage Current

1

µA

Gate-Source Leakage Current

Forward

10

µA

Reverse

-10

µA

ON CHARACTERISTICS

Gate Threshold Voltage

2

4

V

Static Drain-Source On-State Resistance

2

Ω

On State Drain Current

0

30

A

DYNAMIC PARAMETERS

Input Capacitance

850

pF

Output Capacitance

250

pF

Reverse Transfer Capacitance

200

pF

SWITCHING PARAMETERS

Total Gate Charge

3.2

nC

Gate to Source Charge

0.64

nC

Gate to Drain Charge

1.6

nC

Turn-ON Delay Time

Ω,

6

ns

Rise Time

38

ns

Turn-OFF Delay Time

11

ns

Fall-Time

13

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

4

A

Maximum Body-Diode Pulsed Current

16

A

Drain-Source Diode Forward Voltage

0.1

1.48

V