PESD5V0S1BB datasheet(5/15 Pages) NXP

Part #	PESD5V0S1BB

Description	Low capacitance bidirectional ESD protection diodes

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Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

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PESD5V0S1BA_BB_BL_4

Product data sheet

Rev. 04 — 20 August 2009

5 of 15

NXP Semiconductors

PESD5V0S1BA/BB/BL

Low capacitance bidirectional ESD protection diodes

6.

Characteristics

[1]

Non-repetitive current pulse 8/20

µs exponentially decaying waveform according to IEC61000-4-5; see Figure 1.

[2]

Measures from pin 1 to pin 2.

Table 9.

Characteristics

Tamb = 25 °C unless otherwise speciﬁed

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

VRWM

reverse stand-off voltage

-

5

V

IRM

reverse leakage current

VRWM = 5 V;

see Figure 6

-

5

100

nA

V(CL)R

clamping voltage

IPP = 1 A

[1][2] --10

V

IPP = 12 A

[1][2] --14

V

V(BR)

breakdown voltage

IR = 1 mA

5.5

-

9.5

V

rdif

differential resistance

IR = 1 mA

-

50

Ω

Cd

diode capacitance

VR = 0 V; f = 1 MHz;

see Figure 5

-

3545pF

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