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UBCX56 Datasheet(PDF) 2 Page - Unisonic Technologies |
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UBCX56 Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page UBCX56 Preliminary NPN EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R208-047.a ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage (open emitter) VCBO 100 V Collector-Emitter Voltage (open base) VCEO 80 V Emitter-Base Voltage (open collector) VEBO 5 V Collector Current (DC) IC 1 A Peak Collector Current ICM 1.5 A Peak Base Current IBM 0.2 A Storage Temperature TSTG -65~+150 °C Total Power Dissipation (TA≤25 °C, Note2) PTOT 1.3 W Junction Temperature TJ 150 °C Operating Ambient Temperature TOPR -65~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm 2. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 94 °C/W ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Cut-Off Current ICBO IE=0, VCB=30V 100 nA Emitter Cut-Off Current IEBO IC=0, VEB=5V 100 nA Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, VCE=5V, f= 100MHz 0.5 V Base-Emitter Voltage VBE IC=500mA, VCE=2V 1 V Transition Frequency fT IC=10mA, VCE=5V, f= 100MHz 130 MHz DC Current Gain hFE1 VCE=2V, IC=5mA 40 hFE2 VCE=2V, IC=150mA 63 250 hFE3 VCE=2V, IC=500mA 25 DC Current Gain Ratio of the Complementary Pairs FE2 FE1 h h |IC|=150mA, |VCE|=2V 1.3 1.6 CLASSIFICATION OF hFE2 RANK 10 16 RANGE 63~100 100~250 |
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