MMDT5551

Preliminary

DUAL TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R218-022.b

PARAMETER

SYMBOL

RATINGS

UNIT

Collector -Base Voltage

180

V

Collector -Emitter Voltage

160

V

Emitter -Base Voltage

6

V

DC Collector Current

600

mA

Power Dissipation

200

mW

Junction Temperature

+150

°C

Storage Temperature

-40 ~ +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

180

V

Collector-Emitter Breakdown Voltage

160

V

Emitter-Base Breakdown Voltage

6

V

Collector Cut-off Current

50

nA

Emitter Cut-off Current

50

nA

DC Current Gain(note)

80

80

160

400

80

Collector-Emitter Saturation Voltage

0.15

V

0.2

Base-Emitter Saturation Voltage

1

V

1

Current Gain Bandwidth Product

100

300

MHz

Output Capacitance

6.0

pF

Noise Figure

NF

8

dB

Note: Pulse test: PW<300

μs, Duty Cycle<2%