SEMICONDUCTOR

RoHS

RoHS

Nell High Power Products

UNIT

Min.

0.50

0.5

THERMAL RESISTANCE

PARAMETER

Thermal resistance, case to heatsink

Thermal resistance, junction to case

SYMBOL

Typ.

Max.

ºC/W

62

Thermal resistance, junction to ambient

SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise specified)

C

UNIT

Max.

TEST CONDITIONS

PARAMETER

SYMBOL

Typ.

Min.

V

I

= 14A, V

= 0V

SD

GS

Diode forward voltage

1.5

Integral reverse P-N junction

diode in the MOSFET

Continuous source to drain current

SD

14

D (Drain)

G

(Gate)

S (Source)

A

Pulsed source current

56

I

= 14A, V

= 0V,

SD

GS

dI /dt = 100A/µs

F

Reverse recovery time

ns

370

μC

Reverse recovery charge

4.4

Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%

.

Forward turn-on time

550

6.5

Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD)

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IRF13N50 Series

UNIT

V

ns

μA

pF

nC

31

Max.

8.1

250

500

-100

100

0.55

1910

11

15

39

39

290

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

C

V

= 0V, I = 250µA

GS

D

TEST CONDITIONS

I = 1mA, referenced to 25°C

D

V

=500V, V

=0V

DS

GS

T = 25°C

C

Fall time

Gate to source reverse leakage current

Input capacitance

Total gate charge

Output capacitance

PARAMETER

Rise time

Gate to source forward leakage current

Turn-on delay time

Reverse transfer capacitance

Breakdown voltage temperature coefficient

Drain to source breakdown voltage

Turn-off delay time

SYMBOL

▲

▲

V

/

(BR)DSS

Gate to source charge

V

= 400V, V

= 10V, I = 14A

DS

GS

D

Drain to source leakage current

V/ºC

Ω

S

nA

T =125°C

C

Typ.

Min.

0.45

25

V

= 250V,

DD

(Note 1)

I = 14A, R = 7.5Ω,

D

G

V

= 10V,

GS

V

= 25V, V

= 0V, f =1MHz

DS

GS

V

= 30V, V

= 0V

GS

DS

V

= -30V, V

= 0V

GS

DS

V

=50V, I =8.4A

DS

D

Forward transconductance

Static drain to source on-state resistance

V

= 10V, l = 8.4A (Note 1)

GS

D

Gate to drain charge (Miller charge)

V

=400V, V

=0V

DS

GS

2

V

4

V

=V

, I =250μA

GS

DS

D

Gate threshold voltage

STATIC

DYNAMIC

81

20

36

Output capacitance

Effective output capacitance (Note 2)

C

eff.

OSS

V

= 0V

GS

2730

82

160

V

= 1.0V, f =1.0MHz

DS

V

= 400V, f =1.0MHz

DS

V

= 0 to 400V

DS

Reverse recovery current

2. C

eff. is a fixed capacitance that gives the same charging time as Coss while V

is rising from 0 to 80% V

oss

DS

DS

21

31

A