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50N06 Datasheet(PDF) 3 Page - Nell Semiconductor Co., Ltd |
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50N06 Datasheet(HTML) 3 Page - Nell Semiconductor Co., Ltd |
3 / 9 page SEMICONDUCTOR RoHS RoHS Nell High Power Products 50N06 Series UNIT V ns μA pF nC 80 Max. 2.0 50 60 18 -100 100 0.07 900 80 40 100 90 430 ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) C I = 250µA, V = 0V D GS TEST CONDITIONS I = 250µA, referenced to 25°C D V =60V, V =0V DS GS T = 25°C C Fall time Gate to source reverse leakage current Input capacitance Total gate charge Output capacitance PARAMETER Rise time Gate to source forward leakage current Turn-on delay time Reverse transfer capacitance Breakdown voltage temperature coefficient Drain to source breakdown voltage Turn-off delay time SYMBOL CISS ▲ ▲ V / (BR)DSS TJ V(BR)DSS IGSS QG tr tf QGS 9.6 Gate to source charge Gate to drain charge (Miller charge) 30 V = 48V, V = 10V, I = 50A DS GS D (Note 1, 2) Drain to source leakage current IDSS COSS CRSS td(ON) td(OFF) QGD V/ºC mΩ V nA T =150°C C Typ. Min. 22 4.0 1.0 1220 550 100 60 200 180 160 40 10 UNIT V nC Max. SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise specified) C I = 50A, V = 0V SD GS TEST CONDITIONS Integral reverse P-N junction diode in the MOSFET I = 50A, V = 0V, S GS dI /dt = 100A/µs F PARAMETER Reverse recovery time Pulsed source current Continous source current Diode forward voltage SYMBOL IS VSD ISM trr Reverse recovery charge Qrr A ns Typ. Min. 200 55 80 D (Drain) G (Gate) S (Source) 1.5 50 Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%. 2. Essentially independent of operating temperature. V = 30V, I = 25A, R =50Ω DD D G (Note 1, 2) V = 25V, V = 0V, f =1MHz DS GS V = -20V, V = 0V GS DS V = 20V, V = 0V GS DS Page 3 of 9 www.nellsemi.com V =V , I =250μA GS DS D Gate threshold voltage Static drain to source on-state resistance RDS(ON) VGS(TH) I = 50A, V = 10V D GS |
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