SEMICONDUCTOR

RoHS

RoHS

Nell High Power Products

50N06 Series

UNIT

V

ns

μA

pF

nC

80

Max.

2.0

50

60

18

-100

100

0.07

900

80

40

100

90

430

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

C

I = 250µA, V

= 0V

D

GS

TEST CONDITIONS

I = 250µA, referenced to 25°C

D

V

=60V, V

=0V

DS

GS

T = 25°C

C

Fall time

Gate to source reverse leakage current

Input capacitance

Total gate charge

Output capacitance

PARAMETER

Rise time

Gate to source forward leakage current

Turn-on delay time

Reverse transfer capacitance

Breakdown voltage temperature coefficient

Drain to source breakdown voltage

Turn-off delay time

SYMBOL

▲

▲

V

/

(BR)DSS

9.6

Gate to source charge

Gate to drain charge (Miller charge)

30

V

= 48V, V

= 10V, I = 50A

DS

GS

D

(Note 1, 2)

Drain to source leakage current

V/ºC

mΩ

V

nA

T =150°C

C

Typ.

Min.

22

4.0

1.0

1220

550

100

60

200

180

160

40

10

UNIT

V

nC

Max.

SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise specified)

C

I

= 50A, V

= 0V

SD

GS

TEST CONDITIONS

Integral reverse P-N junction

diode in the MOSFET

I = 50A, V

= 0V,

S

GS

dI /dt = 100A/µs

F

PARAMETER

Reverse recovery time

Pulsed source current

Continous source current

Diode forward voltage

SYMBOL

Reverse recovery charge

A

ns

Typ.

Min.

200

55

80

D (Drain)

G

(Gate)

S (Source)

1.5

50

Note:

V

= 30V, I = 25A, R =50Ω

DD

D

G

(Note 1, 2)

V

= 25V, V

= 0V, f =1MHz

DS

GS

V

= -20V, V

= 0V

GS

DS

V

= 20V, V

= 0V

GS

DS

Page 3 of 9

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V

=V

, I =250μA

GS

DS

D

Gate threshold voltage

Static drain to source on-state resistance

I = 50A, V

= 10V

D

GS