SEMICONDUCTOR

RoHS

RoHS

Nell High Power Products

2SK2611 Series

www.nellsemi.com

Page 1 of 6

N-Channel Power MOSFET

(9A, 900Volts)

PRODUCT SUMMARY

I (A)

D

9

V

(V)

DSS

900

1.10 @ V

= 10V

GS

58

R

(Ω)

DS(ON)

Q (nC) max.

G

UNIT

V /ns

V

A

mJ

ºC

-55 to 150

VALUE

9

5.6

900

±30

27

900

150

3.5

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)

C

T =25°C to 150°C

J

TEST CONDITIONS

R

=20KΩ

GS

T =25°C

C

T =100°C

C

Operation junction temperature

Storage temperature

Peak diode recovery dv/dt(Note 3)

PARAMETER

Pulsed Drain current(Note 1)

Continuous Drain Current (V

= 10V)

GS

Total power dissipation

Gate to Source voltage

Drain to Gate voltage

Drain to Source voltage

SYMBOL

dv/dt

.

.

lbf in (N m)

300

Maximum soldering temperature, for 10 seconds

Mounting torque, #6-32 or M3 screw

-55 to 150

Note:

10 (1.1)

1.6mm from case

Avalanche current(Note 1)

9

T =25°C

C

2

AS

DD

G

J

663

Single pulse avalanche energy(Note 2)

3

, starting T

.

SD

DD

(BR)DSS

1.2

Derating factor above 25

mJ

15

Repetitive avalanche energy(Note 1)

l

=9A, R

=10V

AR

GS

=50Ω, V

GS

l

=9A, =15.0mH

AS

L

W

TO-3PB

G

D

S

D

D (Drain)

G

(Gate)

S (Source)

DESCRIPTION

Low reverse transfer capacitance

(C

= 45pF typical)

RSS

R

= 1.10Ω @ V

= 10V

DS(ON)

GS

Ultra low gate charge(58nC typical)

Fast switching capability

100% avalanche energy specified

Improved dv/dt capability

150°C operation temperature

FEATURES

They are designed for use in applications such as switched

mode power supplies, DC to DC converters, motor control

circuits, UPS, relay drive and general purpose switching

applications.

The Nell 2SK2611 is a three-terminal silicon device with

current conduction capability of 9A, fast switching speed,

low on-state resistance, breakdown voltage rating of 900V,

and max. threshold voltage of 4 volts.

TO-3PB