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13003DWG-A-TM3-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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13003DWG-A-TM3-T Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 4 page 13003DW Preliminary NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R223-012.b ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 350 V Collector-Emitter Voltage VCEO 200 V Emitter-Base Voltage VEBO 9 V Continuous Collector Current IC 2 A Power Dissipation TA=25°C PD 1 W TC=25°C 35 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=1mA 350 V Collector-Emitter Breakdown Voltage BVCEO IC=10mA 200 V Emitter-Base Breakdown Voltage BVEBO IE=1mA 9 V Collector Cut-Off Current ICBO VCB=350V, IE=0 0.1 mA Collector-Emitter Cut-Off Current ICEO VCE=200V, IB=0 0.1 mA Emitter-Base Cut-Off Current IEBO VEB=9V, IC=0 0.1 mA DC Current Gain (Note 1) hFE IC=0.5A, VCE=5.0V 15 30 Low current and high current hFE2 hFE1 ratio hFE1/ hFE2 hFE1: VCE=5V, IC=50mA 0.7 0.9 hFE2: VCE=5V, IC=0.5A Collector-Emitter Saturation Voltage (Note) VCE(SAT) IC=1.5A, IB=0.5A 0.21 1 V Base-Emitter Saturation Voltage (Note) VBE(SAT) IC=1.5A, IB=0.5A 1.1 1.5 V Storage Time tS UI9600,IC=0.1A 2.5 4.5 μs Rise Time tR 1 μs Fall Time tF 1 μs Transition Frequency fT IC=0.2A, VCE=10V, f=1MHz 4 MHz Diode Forward Voltage VF IF=2A 2.5 V Note: Pulse test, pulse width tp≤300µs, Duty cycle≤2% CLASSIFICATION OF hFE RANK A B C RANGE 15 ~ 20 20 ~ 25 25 ~ 30 |
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