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13003BDG Datasheet(PDF) 3 Page - Unisonic Technologies |
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13003BDG Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 4 page 13003BDG Preliminary NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R223-017.b ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 450 V Emitter-Base Voltage VEBO 9 V Continuous Collector Current IC 1.5 A Power Dissipation (TC=25 °C) TO-251 PD 10 W TO-126 20 W TO-92 1 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-251 θJA 95 °C/W TO-126 107 TO-92 150 Junction to Case TO-251 θJC 13 °C/W TO-126 7.5 TO-92 100 ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=0.1mA 800 V Collector-Emitter Breakdown Voltage BVCEO IC=1mA 450 V Emitter-Base Breakdown Voltage BVEBO IE=0.1mA 9 V Collector Cut-Off Current ICBO VCB=800V, IE=0 0.1 mA Collector-Emitter Cut-Off Current ICEO VCE=450V, IB=0 0.1 mA Emitter-Base Cut-Off Current IEBO VEB=9V, IC=0 0.1 mA DC Current Gain (Note) hFE VCE=5V, IC=0.2A 20 40 Low current and high current hFE2 hFE1 ratio hFE1/ hFE2 hFE1: VCE=5V, IC=5mA 0.75 0.8 hFE2: VCE=5V, IC=0.2A Collector-Emitter Saturation Voltage (Note) VCE(SAT) IC=0.5A, IB=0.1A 0.18 0.8 V Base-Emitter Saturation Voltage (Note) VBE(SAT) IC=0.5A, IB=0.1A 0.9 1.5 V Storage Time tS UI9600, IC=0.1A 2 5 μs Rise Time tR 1 μs Fall Time tF 1 μs Transition Frequency fT VCE=10V, IC=0.1A, f=1MHz 5 MHz Note: Pulse test, pulse width tp≤300µs, Duty cycle≤2%. |
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