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BTB5839M3 Datasheet(PDF) 1 Page - Cystech Electonics Corp. |
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BTB5839M3 Datasheet(HTML) 1 Page - Cystech Electonics Corp. |
1 / 8 page CYStech Electronics Corp. Spec. No. : C240M3 Issued Date : 2012.10.18 Revised Date : 2013.08.07 Page No. : 1/8 BTB5839M3 CYStek Product Specification Low Vcesat PNP Epitaxial Planar Transistor BTB5839M3 Features • Low VCE(sat), VCE(sat)=-0.3 V (max), at IC / IB = -2A / -0.1A • Excellent current gain characteristics • Pb-free lead plating and halogen-free package Symbol Outline Absolute Maximum Ratings (Ta=25 °C) BTB5893M3 SOT-89 B:Base C:Collector E:Emitter B C E Parameter Symbol Limits Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -7 V Collector Current (DC) IC -3 A Collector Current (Pulse) ICP -5 (Note 1) A Power Dissipation Pd 0.6 W Power Dissipation Pd 2 (Note 2) W Operating Junction and Storage Temperature Range Tj ; Tstg -55~+150 °C |
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