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BTB1199M3 Datasheet(PDF) 1 Page - Cystech Electonics Corp. |
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BTB1199M3 Datasheet(HTML) 1 Page - Cystech Electonics Corp. |
1 / 8 page CYStech Electronics Corp. Spec. No. : C315M3-A Issued Date : 2008.06.04 Revised Date : 2013.08.05 Page No. : 1/8 BTB1199M3 CYStek Product Specification Low Vcesat PNP Epitaxial Planar Transistor BTB1199M3 Features • Low VCE(sat), VCE(sat)=-0.24V (typical), at IC / IB =- 500mA /- 20mA • Pb-free package Symbol Outline BTB1199M3 SOT-89 B:Base C:Collector B C E E:Emitter Absolute Maximum Ratings (Ta=25 °C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current(DC) IC -2 A Peak Collector Current ICM -4 A Peak Base Current IBM -200 mA 0.6 1 *2 Power Dissipation Pd 2 *3 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : *1 Single pulse, Pw=10ms *2 When mounted on FR-4 PCB with area measuring 10×10×1 mm *3 When mounted on ceramic with area measuring 40×40×1 mm |
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